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Dmitry VekslerTerahertz Science and Technology
Rensselaer Polytechnic InstituteTroy, NY
I’m currently working with Prof. M. Shur in the Department of Physics, Applied Physics and Astronomy. We study the physics of advanced semiconductor devices.
More specifically, my research involves the design, development, and characterization of tunable terahertz (THz) detectors and emitters based on nonlinear plasma effects in high electron mobility transistors (HEMTs). The theory predicts a high level of sensitivity of these devices for the detection of THz frequency electromagnetic radiation. Our experimental results support this prediction.
My goal is to use this physical concept to develop a new class of tunable semiconductor detectors based on nanometer HEMTs operating at room and elevated temperatures. These detectors will be small and fast and therefore can be used for construction of matrixes and cameras allowing THz space and time resolved imaging. Potential sensitivity improvements that are available from plasma-wave transistors could lead to a spectacular breakthrough for systems that use THz radiation.
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