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Patric LockhartTerahertz Science and Technology
Rensselaer Polytechnic InstituteTroy, NY
I am currently working with Partha Dutta in the ECSE department where our group strives to grow bulk crystals of novel semiconductor alloys (such as GaInSb, GaInAs, and GaInAsSb) for a variety of electronic and optoelectronic applications.
Recently, these materials have also shown interesting terahertz emission properties. My research will be to understand the effect of the fundamental properties (such as bandstructure) of these alloys on the terahertz emission characteristics.
This work will be done in collaboration with research students from Partha Dutta, Prof. Xi-Cheng Zhang and Ingrid Wilke. Through the development of different materials under different growth conditions, we intend to explore the fundamental physics behind terahertz emission from different materials and thereby improve the magnitude and tune the frequency of emitted terahertz pulses.
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