
My goal is to characterize and to provide a quantitative description of the THz emission processes from antimonide based III-V compound semiconductors, i.e. binary, ternary, and quaternary systems. Some of the techniques that I employ in my research are time domain THz emission spectroscopy, Hall effect, FTIR, electron probe micro analysis, TEM, among others. It is the hope of my research to identify the key material's properties that govern THz emission processes in semiconductor materials for the development of practical sources of THz radiation.
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